Infineon BSC027N04LSGATMA1: A Comprehensive Technical Overview

The Infineon BSC027N04LSGATMA1 is a benchmark N-channel MOSFET engineered using OptiMOS™ 5 40V technology, representing a significant leap in power semiconductor performance for a wide array of applications. This device is specifically designed to offer an optimal balance between low on-state resistance and high switching speed, making it a premier choice for high-efficiency power conversion systems.

At the core of this MOSFET's performance is its exceptionally low typical on-state resistance (RDS(on)) of just 2.7 mΩ at a gate-source voltage of 10 V. This minimal resistance is critical for reducing conduction losses, which directly translates into higher system efficiency, reduced heat generation, and the potential for more compact designs due to less demanding thermal management requirements.

The device is housed in the robust PG-TDSON-8 (SuperSO8) package, which is renowned for its superior thermal and electrical characteristics. This package features an exposed top-side cooling pad that enables efficient dual-side cooling when mounted on a PCB. This design drastically improves heat dissipation, allowing the MOSFET to handle a continuous drain current (ID) of 70 A at 25°C and even higher peak currents, making it exceptionally reliable in high-power scenarios such as motor drives and power supplies.

Furthermore, the BSC027N04LSGATMA1 boasts an ultra-low gate charge (QG) and a small reverse recovery charge (Qrr). These parameters are pivotal for achieving high-frequency switching operations, which are essential for modern switch-mode power supplies (SMPS), DC-DC converters, and automotive applications. The low switching losses ensure that the device operates efficiently even at elevated frequencies, contributing to higher power density in end products.

Its qualification for automotive applications underscores its reliability and robustness. It meets stringent AEC-Q101 standards, ensuring performance under the harsh conditions typical of automotive environments, including wide temperature fluctuations and high vibrational stress. This makes it ideal for use in engine control units, electric power steering, and battery management systems.

ICGOO

ICGOODFIND: The Infineon BSC027N04LSGATMA1 stands out as a top-tier 40V MOSFET, masterfully combining an ultra-low RDS(on) of 2.7 mΩ with superior switching performance in a thermally efficient SuperSO8 package. Its automotive-grade robustness and high current-handling capability make it an indispensable component for designing high-efficiency, high-power-density, and reliable power electronics systems.

Keywords:

1. OptiMOS™ 5 Technology

2. Low RDS(on)

3. SuperSO8 Package

4. High Switching Speed

5. Automotive Grade (AEC-Q101)