Infineon BAT15-02LRHE6327 Schottky Diode Datasheet and Application Notes

The Infineon BAT15-02LRHE6327 is a surface-mount silicon Schottky diode pair, specifically engineered for high-frequency applications. Housed in a compact SC-79 package, this component is a critical building block in modern RF and microwave circuits, offering excellent performance in mixing, detection, and signal sampling up to several GHz.

A primary highlight from its datasheet is its extremely low parasitic capacitance and series resistance. The BAT15-02LRHE6327 features a typical capacitance of just 0.6 pF per diode and a low forward voltage of around 350 mV at 0.1 mA. This unique combination ensures minimal signal loss and power consumption, which is paramount in sensitive receiver paths and precision measurement equipment. The common-cathode configuration of the dual-diode pair is particularly advantageous for designing balanced mixers and double-balanced mixer rings, providing inherent circuit symmetry.

Key Application Areas:

Mixers and Frequency Converters: The diode's fast switching speed and low noise make it ideal for use in mixer circuits, both singly and in pairs, for up- and down-conversion of RF signals in communication systems, from cellular base stations to satellite transceivers.

RF Signal Detection and Demodulation: Its low barrier height and sharp turn-on characteristic allow for efficient power detection and amplitude modulation (AM) demodulation even at low signal levels.

Sample-and-Hold Circuits: The low forward voltage and fast recovery time are critical for accurate sampling of high-frequency analog signals in test and measurement instrumentation.

Input Protection: While not its primary function, the Schottky diode's characteristics can be leveraged in some designs for clamping and protecting sensitive low-voltage inputs from transient overvoltage spikes.

When integrating the BAT15-02LRHE6327 into a design, several factors from the application notes must be considered. Proper RF layout is non-negotiable. This includes using a continuous ground plane, minimizing the length of all RF traces, and employing appropriate RF decoupling to prevent unwanted oscillations and ensure stability. Furthermore, careful attention must be paid to thermal management under high power dissipation, even though the package is small, to maintain long-term reliability and performance.

ICGOOODFIND: The Infineon BAT15-02LRHE6327 stands out as a superior choice for high-frequency designers seeking a reliable and high-performance Schottky diode. Its exceptional blend of low capacitance, low forward voltage, and a miniature form factor makes it an indispensable component for optimizing the performance of demanding RF applications, from communication infrastructure to advanced radar systems.

Keywords:

Schottky Diode

RF Mixer

Low Capacitance

Surface-Mount

High-Frequency