Infineon IPP60R360P7: High-Performance 600V CoolMOS™ P7 Power Transistor

In the realm of power electronics, achieving higher efficiency, power density, and reliability is a perpetual goal. The Infineon IPP60R360P7 stands as a testament to this pursuit, representing a significant advancement in high-voltage MOSFET technology. As part of Infineon's renowned CoolMOS™ P7 family, this 600V power transistor is engineered to set new benchmarks in performance for a wide array of switching applications.

The cornerstone of the IPP60R360P7's superiority is its exceptionally low effective dynamic loss per area. This is a critical metric, as it directly translates to higher overall system efficiency. By minimizing switching losses, which often dominate in high-frequency operations, this MOSFET allows designers to push the boundaries of switching frequencies. This capability is paramount for developing smaller, lighter, and more compact power supplies without sacrificing performance or thermal management.

A key innovation within the CoolMOS™ P7 series is the integration of a fast body diode with enhanced ruggedness. This feature is particularly valuable in circuits like power factor correction (PFC) or half-bridge topologies, where the body diode is frequently utilized. The diode's improved reverse recovery characteristics (Qrr) significantly reduce switching losses and electromagnetic interference (EMI), while its ruggedness enhances the device's reliability under stressful conditions, such as during hard commutation events.

Furthermore, the IPP60R360P7 boasts an ultra-low on-state resistance (RDS(on)) of just 360 mΩ. This low resistance minimizes conduction losses, ensuring that less energy is wasted as heat during the 'on' state. The combination of low switching and conduction losses makes this device exceptionally efficient, leading to cooler operation and reduced requirements for heat sinking, which further contributes to higher power density and lower system cost.

The benefits extend beyond pure electrical performance. The P7 technology is designed with ease of use in mind. Its high dv/dt capability and excellent parameter distribution simplify the design-in process, providing designers with greater flexibility and robustness. Whether it's used in server and telecom SMPS, industrial motor drives, solar inverters, or lighting applications, the IPP60R360P7 delivers consistent and reliable performance.

ICGOODFIND Summary: The Infineon IPP60R360P7 CoolMOS™ P7 is a high-performance 600V MOSFET that excels by delivering a superior balance of minimized dynamic losses, integrated rugged body diode, and ultra-low conduction resistance. It is an optimal choice for designers aiming to maximize efficiency and power density in modern high-frequency switching power systems.

Keywords: CoolMOS™ P7, High Efficiency, Low Switching Loss, Fast Body Diode, High Power Density.