HMC663LC3: A Comprehensive Technical Overview of the 20 GHz Divide-by-4 Prescaler

Release date:2025-09-12 Number of clicks:195

**HMC663LC3: A Comprehensive Technical Overview of the 20 GHz Divide-by-4 Prescaler**

The **HMC663LC3** is a high-performance **InGaP GaAs HBT Divide-by-4 Prescaler** monolithic microwave integrated circuit (MMIC), engineered to operate with input frequencies up to **20 GHz**. This device is a critical component in advanced RF and microwave systems, including point-to-point and point-to-multi-point radios, satellite communications, military ECM (Electronic Countermeasures), and high-speed test and measurement equipment. Its primary function is to accurately divide a high-frequency input signal by a factor of four, providing a stable, lower-frequency output that is easier to process by subsequent circuitry, such as phase-locked loops (PLLs) and frequency synthesizers.

A key feature of the HMC663LC3 is its **exceptionally wide operating bandwidth**, which accepts input signals from 3 GHz to an impressive **20 GHz**. This broad range provides system designers with significant flexibility across numerous Ka-band and lower-frequency applications. The prescaler requires a single positive supply voltage between **+3.3 V and +5 V**, drawing a nominal current of 85 mA, making it suitable for both portable and fixed installations where power efficiency is a consideration.

The device is designed for robust performance. It exhibits a low **phase noise** profile, which is paramount in maintaining signal integrity and minimizing jitter in frequency synthesis chains. The **single-ended input and output** ports simplify board layout and interface with other components, though careful impedance matching (50 Ω) is required to ensure optimal performance. The HMC663LC3 is housed in a leadless **3x3 mm SMT ceramic package**, making it ideal for high-density, compact PCB designs common in modern communication systems. Its operational temperature range is from -40 °C to +85 °C, ensuring reliability in harsh environmental conditions.

Internally, the architecture leverages **Indium Gallium Phosphide Heterojunction Bipolar Transistor (InGaP GaAs HBT)** technology. This process is chosen for its superior high-frequency performance, high breakdown voltage, and excellent reliability compared to other semiconductor technologies. This allows the HMC663LC3 to achieve a high input IP3 (Third-Order Intercept Point), enhancing its linearity and dynamic range in the presence of strong interfering signals.

**ICGOOODFIND**: The HMC663LC3 stands out as a premier solution for high-frequency division, offering unparalleled bandwidth, robust phase noise performance, and reliable operation in a compact form factor. Its use of advanced InGaP HBT technology makes it a dependable and high-linearity choice for demanding RF applications up to 20 GHz.

**Keywords**: **Divide-by-4 Prescaler**, **20 GHz**, **InGaP GaAs HBT**, **Phase Noise**, **MMIC**.

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